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SUM110N04-2m1P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.7
I D = 30 A
V GS = 10 V
100
10
1.4
1
T J = 150 °C
T J = 25 °C
V GS = 4.5 V
1.1
0. 8
0.5
0.1
0.01
0.001
- 50
- 25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0.010
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
0.6
V SD - So u rce-to-Drain V oltage ( V )
Forward Diode Voltage vs. Temperature
0.00 8
0.2
0.006
- 0.2
0.004
T J = 150 °C
I D = 5 mA
- 0.6
0.002
0.000
T J = 25 °C
- 1.0
I D = 250 μ A
0
2
4
6
8
10
- 50
- 25
0
25
50
75
100
125
150
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
1000
Limited by R DS(on) *
100
10
10 μ s
100 μ s
1 ms
10 ms
T J - Temperat u re (°C)
Threshold Voltage
100 ms, DC
1
0.1
0.01
T C = 25 °C
Single P u lse
B V DSS
0.1
1
10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
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